Array substrate and manufacturing method thereof

A manufacturing method of an array substrate, comprising:

• forming a gate layer on a substrate;
• forming a gate insulating material layer on the gate layer, wherein the gate insulating material layer covers the gate layer and the substrate;
• forming a polysilicon material layer on the gate insulating material layer;
• depositing an etch stop material layer on the polysilicon material layer;
• channel doping the polysilicon material layer;
• etching the polysilicon material layer, the etch stop material layer and the gate insulating material layer to form an active layer, an etch stop layer and a gate insulating layer, wherein the gate insulating layer covers the gate layer and the substrate, the active layer is formed on the gate layer, the etch stop layer covers the active layer;
• forming a source/drain layer on the active layer and the gate insulating layer, the active layer being electrically connected to the source/drain layer;
• and
• forming a through hole on the source/drain layer to further form a source and a drain, the through hole being corresponding to the active layer, and both of the source and the drain being electrically connected to the active layer;
• wherein the step of depositing an etch stop material layer on the polysilicon material layer further comprises the following steps:
• depositing a prefabricated etch stop material layer on the polysilicon material layer;
• etching the prefabricated etch stop material layer to form the etch stop material layer;
• wherein the etch stop material layer comprises a first etch stop material layer and a second etch stop material layer connected to the first etch stop material layer, the first etch stop material layer is disposed corresponding to the active layer, and a thickness of the first etch stop material layer is greater than a thickness of the second etch stop material layer.