Vertically integrated active matrix backplane
AssigneeInternational Business Machines Corporation
InventorsStephen M. Gates, Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi
Life of this patent
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Abstract
A method of forming an active matrix pixel that includes forming a driver device including contact regions deposited using a low temperature deposition process on a first portion of an insulating substrate. An electrode of an organic light emitting diode is formed on a second portion of the insulating substrate. The electrode is in electrical communication to receive an output from the driver device. At least one passivation layer is formed over the driver device. A switching device comprising at least one amorphous semiconductor layer is formed on the at least one passivation layer over the driver device.
Claims20
An active matrix pixel comprising:
- a switch thin film transistor (TFT) device comprising an amorphous silicon channel layer, wherein the switch TFT device includes a switch TFT gate contact, a switch TFT drain contact and a switch TFT source contact;
- a driver transistor comprising a crystalline channel of single crystal silicon, the single crystal silicon present directly on a first portion of an insulating substrate, the driver transistor including a first contact, a second contact and a third contact all positioned on a first surface of the single crystal silicon that is opposite a second surface of the single crystal silicon that is positioned directly on the insulating substrate, wherein the amorphous silicon channel layer of the switch TFT device overlaps the crystalline channel of the single crystal silicon in a thickness direction of the insulating substrate, a portion of the amorphous silicon channel layer overlapping the crystalline channel in the thickness direction to provide that at least a portion of the crystalline channel of the driver transistor is present within a same cross section as the portion of the amorphous silicon channel layer;
- and
- an organic light-emitting diode (OLED) comprising at least one electrode, wherein the switch TFT gate contact is connected to a row select line, one of the switch TFT drain contact and the switch TFT source contact is connected to a data line and the other of said switch TFT drain contact and said switch TFT source contact is connected to the first contact of the driver transistor, and one of the second contact and the third contact of the driver transistor is connected to at least one terminal of a power supply line and the other of said second contact and the third contact of the driver transistor is connected to one of said at least one electrode of the OLED, wherein a single layer bottom electrode of said at least one electrode of the OLED and the crystalline channel of the single crystal silicon are on a same level, the single layer bottom electrode being positioned directly on the insulating substrate.
A method of forming an active matrix pixel comprising:
- forming a driver transistor on a first portion of an insulating substrate, the driver transistor including hydrogenated semiconductor including contact regions on a crystalline channel of single crystal silicon, the single crystal silicon present directly on the first portion of the insulating substrate, wherein the hydrogenated semiconductor including contact regions are formed using a low temperature deposition process;
- forming an electrode of an organic light emitting diode (OLED) directly on a second portion of the insulating substrate, wherein the electrode is in electrical communication to receive an output from the driver transistor, wherein the electrode of the OLED and the crystalline channel of the single crystal silicon are on a same level;
- forming at least one passivation layer over the driver transistor;
- and
- forming a switch thin film transistor (TFT) device comprising an amorphous silicon channel layer on the at least one passivation layer over the driver transistor,
- wherein the amorphous silicon channel layer of the switch TFT device overlaps the crystalline channel of the single crystal silicon in a thickness direction of the insulating substrate.
Dependencies are inferred from the claim text.