Organic light emitting diode display device and method of fabricating the same

An organic light emitting diode display device, comprising:

• a first substrate including first and second pixel regions adjacent to each other;
• first and second thin film transistors on the first substrate, within respective first and second driving areas;
• first electrodes in the first and second pixel regions and connected to the first and second thin film transistors, respectively, wherein the first electrode in the first pixel region overlaps the first thin film transistor and is adjacent to the first electrode in the second pixel region;
• first and second banks on the first electrodes, respectively, wherein each of the first and second banks includes a first portion and a second portion having a different molecular weight from the first portion, a molecular weight of the second portion is greater than a molecular weight of the first portion, and the second portion is disposed between the first portion and each of the first electrodes, respective first and second banks overlying the first and second driving areas;
• wherein a distance between the first and second banks is smaller than a distance between the first and second thin film transistors;
• and
• wherein the first electrode extending from the first driving area overlaps the second driving area.

An organic light emitting diode display device, comprising:

• a first substrate including first and second pixel regions adjacent to each other;
• first and second thin film transistors on the first substrate;
• a passivation layer on the first and second thin film transistors;
• first electrodes in the first and second pixel regions on the passivation layer and connected to the first and second thin film transistors, respectively, wherein the first electrode in the first pixel region is adjacent to the first electrode in the second pixel region and a portion of the passivation layer is exposed between the first electrodes in the first and second pixel regions;
• and
• a bank covering the exposed portion of the passivation layer and respective edges of the first electrodes in the first and second pixel regions, wherein the bank includes a first portion having a first molecular weight and a second portion having a second molecular weight different from the first portion, and the second portion contacts the exposed portion of the passivation layer;
• wherein the second molecular weight is greater than the first molecular weight;
• and
• wherein the first portion is stacked on the second portion, wherein the first electrode of the first pixel region is spaced apart from a gate electrode of the second thin film transistor of the second pixel region and overlaps a source electrode of the second thin film transistor of the second pixel region.

An organic light emitting diode display device, comprising:

• a first substrate including first and second pixel regions adjacent to each other;
• first and second thin film transistors on the first substrate;
• first electrodes in the first and second pixel regions and connected to the first and second thin film transistors, respectively, wherein the first electrode in the first pixel region overlaps the first thin film transistor and is adjacent to the first electrode in the second pixel region;
• first and second banks on the first electrodes, respectively, wherein each of the first and second banks includes a first portion and a second portion having a different molecular weight from the first portion, a molecular weight of the second portion is greater than a molecular weight of the first portion, and the second portion is disposed between the first portion and each of the first electrodes;
• wherein the first and second banks are disposed over the first and second thin film transistors, respectively, and a distance between the first and second banks is smaller than a distance between the first and second thin film transistors;
• and
• wherein the first electrode of the first pixel region is spaced apart from a gate electrode of the second thin film transistor of the second pixel region and overlaps a source electrode of the second thin film transistor of the second pixel region.