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US 10,651,238 B2Granted
High density multi-time programmable resistive memory devices and method of forming thereof
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsXuan Anh Tran, Eng Huat Toh
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Abstract
Multi-time programmable (MTP) random access memory (RRAM) devices and methods for forming a MTP RRAM device are disclosed. The method includes providing a substrate. The substrate is prepared with at least a first region for accommodating one or more multi-programmable based resistive random access memory (RRAM) cell. A fin-type based selector is provided over the substrate in the first region. A storage element of the RRAM cell is formed over the fin-type based selector. The fin-type based selector is coupled in series with the storage element of the RRAM cell.
Claims9
A semiconductor device comprising:
- a substrate including a memory region and a non-memory region;
- a first fin structure disposed in the memory region;
- a second fin structure disposed in the non-memory region;
- a fin-type transistor disposed in the non-memory region, wherein the fin-type transistor comprises a gate disposed on the second fin structure;
- a first semiconductor layer disposed over the first fin structure, wherein the first semiconductor layer contacts a top surface and sides of the first fin structure, and the first semiconductor layer comprises first polarity type dopants;
- a second semiconductor layer disposed over the first fin structure in the memory region, wherein the second semiconductor layer is disposed over and contacts a top surface of the first semiconductor layer, and the second semiconductor layer comprises second polarity type dopants;
- and
- a storage element disposed over the first fin structure in the memory region, wherein the storage element is disposed above a top surface of the second semiconductor layer, and the storage element is in electrical communication with the second semiconductor layer,
- wherein the first semiconductor layer extends over the second fin structure to define elevated source/drain (S/D) regions of the fin-type transistor in the non-memory region.
6 more elements
Dependencies are inferred from the claim text.