US 10,651,236 B2 · Semiconductor device including variable resistance memory device

Abstract

A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.

Claims20

Dependent claims

A semiconductor device comprising:

a substrate comprising a memory cell region, a memory cell peripheral region and a logic region;
a variable resistance memory device on the memory cell region;
a first via contact structure extending vertically on the memory cell peripheral region;
a second via contact structure extending vertically on the logic region;
a conductive line extending horizontally and electrically connected to the variable resistance memory device, the first via contact structure and the second via contact structure;
and
a plurality of conductive structures electrically connected to the variable resistance memory device and arranged at the memory cell region,
wherein the variable resistance memory device, the first via contact structure and the second via contact structure are arranged between the conductive line and the plurality of conductive structures.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device including variable resistance memory device

Life of this patent

Semiconductor device including variable resistance memory device

Life of this patent

Abstract

Claims20