2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure

An MRAM structure comprising:

• a substrate;
• and
• a first MRAM set disposed on the substrate, wherein the first MRAM set comprises:
• a first transistor disposed on the substrate, the first transistor comprising a first gate structure, a first source/drain doping region and a first common source/drain doping region;
• a second transistor disposed on the substrate, the second transistor comprising a second gate structure, a second source/drain doping region and the first common source/drain doping region;
• a second MTJ disposed on the second transistor, wherein the first common source/drain doping region electrically connects to the second MTJ;
• a first MTJ disposed on the first transistor, wherein the first MTJ and the second MTJ have different sizes or shapes, and the second MTJ connects to the first MTJ in series;
• a bit line below the first MTJ and electrically connecting to the first MTJ;
• and
• a source line below the bit line and the source line electrically connecting to the first source/drain doping region and the second source/drain doping region.