Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torque

A device, comprising:

• a substrate;
• a MnxN layer overlying the substrate wherein 2≤x≤4.75;
• a multi-layered structure that is non-magnetic at room temperature, the multi-layered structure comprising alternating layers of Co and E, wherein E comprises at least one other element that includes at least one of Ge, Ga, Sn and Al, wherein a composition of the multi-layered structure is represented by Co1-zEz, with z being in a range from 0.45 to 0.55, the multi-layered structure overlying the MnxN layer;
• a first magnetic layer that includes a Heusler compound, the first magnetic layer being in contact with the multi-layered structure, the multi-layered structure being between the MnxN layer and the first magnetic layer, wherein the first magnetic layer has a magnetic moment that is switchable, the Heusler compound having a perpendicular magnetic anisotropy;
• a tunnel barrier overlying the first magnetic layer;
• and
• a second magnetic layer in contact with the tunnel barrier, wherein:
• the first magnetic layer, the tunnel barrier, and the second magnetic layer form at least part of a magnetic tunnel junction.

A device, comprising:

• a substrate;
• a MnxN layer overlying the substrate wherein 2≤x≤4.75;
• a multi-layered structure that is non-magnetic at room temperature, the multi-layered structure comprising alternating layers of Co and E, wherein E comprises at least one other element that includes at least one of Ge, Ga, Sn and Al, wherein a composition of the multi-layered structure is represented by Co1-zEz, with z being in a range from 0.45 to 0.55, wherein the multi-layered structure overlies the substrate, the multi-layered structure overlying the MnxN layer;
• a first magnetic layer that includes a Heusler compound, the first magnetic layer being in contact with the multi-layered structure, the multi-layered structure being between the MnxN layer and the first magnetic layer, the Heusler compound having a perpendicular magnetic anisotropy.