Photodetector, method for manufacturing the same, and imaging apparatus

An imaging apparatus comprising:

• a sensor unit including a photodetector;
• and
• a control operation unit connected to the sensor unit,
• the photodetector including
• a quantum dot group including a first quantum dot of a reference size and a second quantum dot of a size other than the reference size,
• a first resonant tunneling structure disposed on a first side of the quantum dot group and including a barrier layer, a well layer, and a barrier layer, and
• a second resonant tunneling structure disposed on a second side of the quantum dot group and including a barrier layer, a well layer, and a barrier layer, wherein
• a first resonance level of the first resonant tunneling structure and a ground level of the first quantum dot have a relationship that causes tunneling, and a second resonance level of the second resonant tunneling structure and an excited level of the first quantum dot have a relationship that causes tunneling.

A method for manufacturing a photodetector comprising:

• forming a quantum dot group including a first quantum dot of a reference size and a second quantum dot of a size other than the reference size;
• forming, on a first side of the quantum dot group, a first resonant tunneling structure including a barrier layer, a well layer, and a barrier layer, the forming being performed to provide the first resonant tunneling structure with a first resonance level leading to tunneling in a relationship with a ground level of the first quantum dot;
• and
• forming, on a second side of the quantum dot group, a second resonant tunneling structure including a barrier layer, a well layer, and a barrier layer, the forming being performed to provide the second resonant tunneling structure with a second resonance level leading to tunneling in a relationship with an excited level of the first quantum dot.