Image sensor and method of manufacturing the same

An image sensor comprising:

• a substrate having a first surface and a second surface opposite the first surface, the substrate including pixel regions disposed along a first direction;
• first and second deep device isolation patterns in the substrate, the first and second deep device isolation patterns extending from a first surface of the substrate to a second surface of the substrate;
• through-electrodes in the substrate, the through-electrodes between the pixel regions when viewed in a plan view;
• an insulating structure, a photoelectric conversion layer, and a top electrode sequentially provided on the second surface;
• bottom electrodes between the insulating structure and the photoelectric conversion layer;
• top contact plugs in the insulating structure to connect the bottom electrodes to the through-electrodes, respectively, at least one of the top contact plugs tapering from a first point of contact with the bottom electrodes to a second point of contact with the through-electrodes;
• and
• color filters buried in the insulating structure,
• wherein the through-electrodes include dopants,
• wherein the first deep device isolation pattern includes a first extension extending in the first direction and first protrusions extending between the pixel regions from the first extension,
• wherein the second deep device isolation pattern includes a second extension extending in the first direction and second protrusions extending between the pixel regions from the second extension to be adjacent to the first protrusions, respectively, and
• wherein one of the through-electrodes is between one of the first protrusions and one of the second protrusions and spaced apart from the first protrusions and the second protrusions.

A CMOS image sensor comprising:

• a substrate including a first surface and a second surface opposite the first surface;
• a transfer gate on the first surface of the substrate;
• a micro lens on the second surface of the substrate;
• a through-electrode in the substrate, the through-electrode extending from the first surface of the substrate to the second surface of the substrate, the through-electrode including doped poly-silicon;
• a through insulating pattern interposed between the through-electrode and the substrate;
• an interlayer insulating layer on the first surface;
• a filling insulation pattern between the through-electrode and the interlayer insulating layer;
• a first bottom contact plug on the first surface of the substrate, the first bottom contact plug penetrating the filling insulation pattern to be in contact with a first surface of the through-electrode;
• a top contact plug on the second surface of the substrate, the top contact plug being in contact with a second surface of the through-electrode and a bottom electrode, the top contact plug tapering from a first point of contact with the bottom electrode to a second point of contact with the through-electrode;
• and
• an insulating layer on the second surface of the substrate, wherein
• wherein the bottom electrode is on the insulating layer, and
• wherein a sidewall of the through insulating pattern is aligned with a sidewall of the filling insulation pattern.