Thin film transistor array substrate and fabricating method thereof

A thin film transistor array substrate comprising:

• a base substrate;
• a first transistor comprising:
• a first electrode on a surface of the base substrate;
• a spacer on the first electrode;
• a second electrode on the spacer;
• a first active layer directly contacting the first electrode, the spacer and the second electrode;
• and
• a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween;
• a storage capacitor comprising:
• a first storage electrode integrally connected to the first electrode or the second electrode;
• and
• a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, wherein the second storage electrode is integrally connected to the first gate electrode;
• and
• a second transistor electrically connected to the storage capacitor, wherein the second transistor comprises a second active layer extending in a direction intersecting the base substrate,
• wherein the second transistor comprises:
• a third electrode on the surface of the base substrate;
• a fourth electrode on the third electrode, wherein a region of the spacer is interposed between the third electrode and the fourth electrode, and the second active layer directly contacts the third electrode, the spacer and the fourth electrode;
• and
• a second gate electrode opposite to the second active layer with the first insulating layer interposed therebetween.