Semiconductor device comprising a sensing unit

A semiconductor device comprising:

• a first sensing unit comprising a first transistor, a second transistor, a first capacitor, and a first node;
• a second sensing unit comprising a third transistor, a fourth transistor, a second capacitor, and a second node;
• a first wiring;
• a second wiring;
• a third wiring;
• and
• a fourth wiring,
• wherein each of the first transistor and the third transistor comprises a first gate and a second gate,
• wherein the first gate of the first transistor and the second gate of the first transistor overlap with each other with a semiconductor film therebetween,
• wherein the second gate of the first transistor is electrically connected to the first node,
• wherein the first wiring is electrically connected to the second wiring through the first transistor,
• wherein the third wiring is electrically connected to the first node through the second transistor,
• wherein a first terminal of the first capacitor is electrically connected to the first node,
• wherein a second terminal of the first capacitor is electrically connected to the fourth wiring,
• wherein the second gate of the third transistor is electrically connected to the second node,
• wherein the first wiring is electrically connected to the second wiring through the third transistor,
• wherein the third wiring is electrically connected to the second node through the fourth transistor,
• wherein a first terminal of the second capacitor is electrically connected to the second node,
• wherein a second terminal of the second capacitor is electrically connected to the fourth wiring,
• wherein one of a source and a drain of the first transistor is directly connected to the first wiring, and
• wherein one of a source and a drain of the third transistor is directly connected to the first wiring.