3D semiconductor devices including a supporter and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Jun Hong, Ee Jou Kim, Joong Shik Shin
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.
Claims20
A semiconductor device comprising:
- a lower conductive layer on a substrate;
- a conductive line on the lower conductive layer;
- a buried trench in the conductive line;
- a supporter on the conductive line and extending in the buried trench;
- a stack structure comprising a plurality of insulating layers and a plurality of conductive layers that are alternately stacked on the supporter;
- a channel structure that passes through the stack structure, the supporter, and the conductive line;
- and
- an isolation trench that passes through the stack structure, the supporter, and the conductive line.
A semiconductor device comprising:
- a substrate comprising a cell region and a pad region;
- a lower conductive layer on the substrate;
- a mold layer in the pad region on the lower conductive layer;
- a conductive line in the cell region on the lower conductive layer and at a substantially same level as the mold layer;
- a plurality of buried trenches in the conductive line and the mold layer;
- a supporter on the conductive line and the mold layer and extending in the plurality of buried trenches;
- a stack structure comprising a plurality of insulating layers and a plurality of conductive layers that are alternately stacked on the supporter;
- a cell channel structure that passes through the stack structure, the supporter, and the conductive line;
- a dummy channel structure that passes through the stack structure, the supporter, and the mold layer;
- and
- a plurality of isolation trenches that pass through the stack structure, the supporter, and the conductive line.
A semiconductor device comprising:
- a substrate comprising a cell region and a pad region adjacent to the cell region;
- a lower conductive layer on the substrate;
- a mold layer in the pad region on the lower conductive layer;
- a conductive line in the cell region on the lower conductive layer and at a substantially same level as the mold layer;
- a first extension buried trench in the mold layer;
- a second extension buried trench spaced apart from the first extension buried trench and in the mold layer;
- a supporter on the conductive line and the mold layer and extending in the first extension buried trench and the second extension buried trench;
- a stack structure comprising a plurality of insulating layers and a plurality of conductive layers that are alternately stacked on the supporter;
- a plurality of cell channel structures that pass through the stack structure, the supporter, and the conductive line;
- a plurality of dummy channel structures that pass through the stack structure, the supporter, and the mold layer between the first extension buried trench and the second extension buried trench;
- and
- a plurality of isolation trenches that pass through the stack structure, the supporter, and the conductive line.
Dependencies are inferred from the claim text.