Method for producing pillar-shaped semiconductor memory device

A method for producing a pillar-shaped semiconductor memory device, the method comprising:

• a mask material layer-forming step of forming, on a semiconductor substrate, a mask material layer having a circular shape in plan view;
• a first semiconductor pillar-forming step of forming a first semiconductor pillar by etching the semiconductor substrate using the mask material layer as a mask to form a semiconductor pillar on the semiconductor substrate, and retracting a side face of the semiconductor pillar to the inside of the semiconductor pillar;
• a tunnel insulating layer-forming step of forming a tunnel insulating layer so as to surround an outer periphery of the first semiconductor pillar;
• a data charge storage insulating layer-forming step of forming a data charge storage insulating layer so as to surround an outer periphery of the tunnel insulating layer;
• a first conductor layer-forming step of forming a first conductor layer on the outer periphery of the first semiconductor pillar and above the semiconductor substrate by allowing a material atom to be incident from a direction perpendicular to an upper surface of the mask material layer;
• a second interlayer insulating layer-forming step of forming a second interlayer insulating layer by allowing a material atom to be incident on the first conductor layer from a direction perpendicular to the upper surface of the mask material layer;
• and
• a stacked material layer-forming step of forming at least one stacked material layer in a direction perpendicular to an upper surface of the semiconductor substrate, the stacked material layer including the first conductor layer and the second interlayer insulating layer as one set,
• wherein data writing and erasing due to data charge transfer between the first semiconductor pillar and the data charge storage insulating layer through the tunnel insulating layer or data charge retention by the data charge storage insulating layer is performed by application of a voltage to the first conductor layer.