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US 10,651,184 B2Granted
Integrated circuit with decoupling capacitor in a structure of the triple well type
AssigneeSTMicroelectronics (Rousset) SAS
InventorAbderrezak Marzaki
Life of this patent
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Abstract
A well of a first conductivity type is insulated from a substrate of the same first conductivity type by a structure of a triple well type. The structure includes a trench having an electrically conductive central part enclosed in an insulating sheath. The trench supports a first electrode of a decoupling capacitor, with a second electrode provided by the well.
Claims13
An integrated circuit, comprising:
- a semiconductor substrate of a first conductivity type;
- a buried semiconductor layer of a second conductivity type, opposite to the first conductivity type, in the semiconductor substrate at a first depth from a top surface of the semiconductor substrate;
- a shallow trench isolation surrounding a portion of the semiconductor substrate, said shallow trench isolation having a second depth from the top surface of the semiconductor substrate that is less than said first depth;
- a deep trench surrounding said portion of the semiconductor substrate, said deep trench having a third depth from the top surface of the semiconductor substrate that is less than said first depth and greater than said second depth leaving a portion of the semiconductor substrate between a bottom of the deep trench and a top of the buried semiconductor layer;
- an insulating sheath on walls and the bottom of said deep trench;
- a conductive material filling said deep trench and in contact with the insulating sheath;
- and
- a zone doped with the second conductivity type located at said portion of the semiconductor substrate in a position in contact with the bottom of the deep trench and the top of the buried semiconductor layer.
5 more elements
An integrated circuit, comprising:
- a semiconductor substrate of a first conductivity type;
- a buried semiconductor layer of a second conductivity type, opposite to the first conductivity type, in the semiconductor substrate at a first depth from a top surface of the semiconductor substrate;
- a shallow trench isolation surrounding a portion of the semiconductor substrate, said shallow trench isolation having a second depth from the top surface of the semiconductor substrate that is less than said first depth;
- a deep trench having a third depth from the top surface of the semiconductor substrate that is greater than said second depth;
- an insulating sheath on walls and a bottom of said deep trench;
- and
- a conductive material filling said deep trench and in contact with the insulating sheath;
- wherein the deep trench comprises a peripheral trench portion that surrounds said portion of the semiconductor substrate and a plurality of branch trench portions that extend from the peripheral trench portion in a direction parallel to the top surface of the semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.