Method for producing pillar-shaped semiconductor device
AssigneeUnisantis Electronics Singapore Pte. Ltd.
InventorsFujio Masuoka, Nozomu Harada
Life of this patent
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Abstract
A method for producing a pillar-shaped semiconductor device includes steps of forming, on the side surface of an N+ layer (38b) of the top portion of a Si pillar (6b) and the side surface of the top portion of a W layer (43a), ring-shaped SiO2 layers and an AlO layer (51) in outer peripheral portions surrounding the ring-shaped SiO2 layers; etching the ring-shaped SiO2 layers through the AlO layer serving as a mask, to form ring-shaped contact holes; and filling the contact holes with W layers (52a, 52b), to form ring-shaped W layers (52a, 52d) being in contact with the side surface of the N+ layer (38b) and the side surface of the top portion of the W layer (43a), and having constant widths in plan view.
Claims12
A method for producing a pillar-shaped semiconductor device, the method comprising:
- a step of providing a semiconductor structure including a substrate,
- a semiconductor pillar disposed on the substrate and extending in a perpendicular direction with respect to the substrate, a gate insulating layer surrounding an outer periphery of the semiconductor pillar,
- a gate conductor layer surrounding the gate insulating layer, and
- an interlayer insulating layer having an upper surface positioned at a level, in the perpendicular direction, that is equal to or higher than an upper end of the gate conductor layer and that is equal to or lower than a top portion of the semiconductor pillar;
- a step of forming a first material layer so as to surround and contact a side surface of an exposed upper portion of the semiconductor pillar;
- a step of forming a second material layer so as to surround the first material layer;
- a step of etching the first material layer through the second material layer serving as an etching mask, to form a first contact hole within the second material layer and surrounding the upper portion of the semiconductor pillar;
- and
- a step of forming a first conductive material layer having conductivity in the first contact hole.
Dependencies are inferred from the claim text.