Compact electrical connection that can be used to form an SRAM cell and method of making the same

An integrated circuit structure, comprising:

• a semiconductor active area;
• a first gate overlying a first channel region in the active area;
• a first transistor that includes the first channel region and a first terminal adjacent to a first side of the channel region in the active area;
• a conductive contact that is electrically coupled to the first terminal of the first transistor, the conductive contact being formed from a first material;
• a second gate adjacent to a second channel region in the active area, the second channel region directly adjacent to the first terminal of the first transistor;
• a conductive member spaced from the first gate, overlying the second gate, and electrically coupled to the second gate, the conductive member being formed from a second material different than the first material;
• a conductive via electrically coupled to the conductive member and positioned to overlie the conductive contact and the conductive member, the conductive via having a lower surface that is coplanar with upper surfaces of the conductive member and conductive contact, and the conductive via electrically coupling the conductive contact of the first transistor to provide electrical coupling from the first terminal of the first transistor to the conductive member.

An integrated circuit structure, comprising:

• a first transistor including a first channel region, a first gate overlying the first channel region, a first source region, and a first drain region;
• a conductive contact directly connected to the first drain region of the first transistor, the conductive contact having an upper surface and being a first material;
• a second transistor including a second channel region, a second gate overlying the second channel region, a second source region, and a second drain region, the second gate directly adjacent to the first drain region;
• a conductive via directly connected to the second gate, the conductive via overlying the second gate, the conductive via having an upper surface and being a second material that is different than the first material;
• an expanded conductive via overlaying the conductive contact and the conductive via and electrically connecting the conductive contact to the conductive via, the expanded conductive via having a lower surface extending from the conductive contact to the conductive via, wherein the upper surfaces of the conductive via and the conductive contact and the lower surface of the expanded conductive via are coplanar.