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US 10,651,177 B1Granted
Semiconductor device and method of forming the same
AssigneeNanya Technology Corporation
InventorChung-Lin Huang
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate, a semiconductor layer, and a contact. The semiconductor layer is over the semiconductor substrate. The contact has an interface with the semiconductor layer. The contact is substantially tapered toward the semiconductor substrate to the interface.
Claims19
A semiconductor device, comprising:
- a semiconductor substrate;
- a semiconductor layer over the semiconductor substrate;
- and
- a contact having an interface with the semiconductor layer,
- wherein the contact is substantially tapered toward the semiconductor substrate to the interface;
- wherein the semiconductor layer has an interface with the semiconductor substrate,
- wherein the semiconductor layer is substantially tapered to the interface between the semiconductor layer and the semiconductor substrate.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first sidewall spacer;
- a second sidewall spacer opposed to the first sidewall spacer;
- a semiconductor layer over the semiconductor substrate, the semiconductor layer including an upper portion and a lower portion, both of which are disposed between the first sidewall spacer and the second sidewall spacer, the upper portion being disposed on the lower portion, wherein the upper portion is, in a direction in which the first sidewall spacer and the second sidewall spacer are arranged, longer than the lower portion;
- and
- a contact disposed on the semiconductor layer.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming a first multi-layer spacer on a semiconductor substrate;
- forming a semiconductor layer on the semiconductor substrate during the formation of the first multi-layer spacer;
- and
- forming a contact on the semiconductor layer.
1 more element
Dependencies are inferred from the claim text.