Method for forming a pattern and method for fabricating a semiconductor device using the same

Abstract

A method for forming a pattern includes: forming a preliminary pattern having a plate portion and a plurality of pad portions that protrude from an end of the plate portion over a substrate; forming a first hard mask pattern that includes a blocking portion covering the pad portions and a plurality of line portions partially covering the plate portion; forming a spacer on a sidewall of each of the line portions; forming a second hard mask pattern that fills a space between the line portions by contacting the spacer; forming an opening that exposes the plate portion between the first hard mask pattern and the second hard mask pattern by removing the spacer; and forming a plurality of line pattern portions that are respectively coupled to the pad portions by etching an exposed portion of the plate portion through the opening.

Dependencies are inferred from the claim text.