Semiconductor device comprising a standard cell including a non-active fin area
AssigneeSocionext Inc.
InventorHiroyuki Shimbo
Life of this patent
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Abstract
Disclosed herein is a semiconductor device including two standard cells which are arranged adjacent to each other in an X direction. One of the two standard cells includes a plurality of first fins which extend in the X direction, and which are arranged along a boundary between the two standard cells in a Y direction. The other standard cell includes a plurality of second fins which extend in the X direction, and which are arranged along the boundary between the two standard cells in the Y direction. The plurality of second fins includes a dummy fin.
Claims18
A semiconductor device comprising a standard cell including a fin transistor, the standard cell further comprising:
- a plurality of first active fins which extend in a first direction, and which are arranged in a second direction that is perpendicular to the first direction along one end of the standard cell in the first direction;
- a plurality of second active fins which extend in the first direction, and which are arranged in the second direction;
- and
- two regions having two different conductivity types, which are arranged adjacent to each other in the second direction, wherein:
- the plurality of first active fins and the plurality of second active fins are arranged in both the two regions having the two different conductivity types,
- in one of the two regions that has one of the two conductivity types, a third active fin is arranged between at least one pair of first and second active fins, the third active fin intersecting with a plurality of first gate lines extending in the second direction, and
- in the other region that has the other of the two conductivity types, a non-active fin area where no active fin is arranged at the same position as the third active fin in the first direction is provided.
A semiconductor device comprising a standard cell including a fin transistor, the standard cell further comprising:
- a plurality of first active fins which extend in a first direction, and which are arranged in a second direction that is perpendicular to the first direction along one end of the standard cell in the first direction;
- a plurality of second active fins which extend in the first direction, and which are arranged in the second direction;
- and
- two regions having two different conductivity types which are arranged adjacent to each other in the second direction, wherein:
- the plurality of first active fins and the plurality of second active fins are arranged in both the two regions having the two different conductivity types,
- in one of the two regions that has one of the two conductivity types, a third active fin is arranged between at least one pair of first and second active fins, the third active fin intersecting with a plurality of first gate lines extending in the second direction, and
- in the other region that has the other of the two conductivity types, a non-active fin area where no active fin is arranged at the same position as the third fin in the first direction is provided, and
- a plurality of second gate lines extending in the second direction are arranged in the first direction in the non-active fin area.
Dependencies are inferred from the claim text.