Single diffusion cut for gate structures
AssigneeGlobalfoundries Inc.
InventorsGuowei Xu, Hui Zang, Ruilong Xie, Haiting Wang
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AssigneeGlobalfoundries Inc.
InventorsGuowei Xu, Hui Zang, Ruilong Xie, Haiting Wang
Estimating the term…
The present disclosure relates to semiconductor structures and, more particularly, to a single diffusion cut for gate structures and methods of manufacture. The structure includes: a plurality of fin structures composed of semiconductor material; a plurality of replacement gate structures extending over the plurality of fin structures; a plurality of diffusion regions adjacent to the each of the plurality of replacement gate structures; and a single diffusion break between the diffusion regions of the adjacent replacement gate structures, the single diffusion break being filled with an insulator material. In a first cross-sectional view, the single diffusion break extends into the semiconductor material and in a second cross-sectional view, the single diffusion break is devoid of semiconductor material of the plurality of fin structures.
A structure comprising:
A structure comprising:
A method comprising:
Dependencies are inferred from the claim text.