Isolated wells for resistor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lung Tung, Min-Chang Liang, Fang Chen
Life of this patent
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Abstract
A semiconductor device includes a substrate, a dielectric layer over the substrate, a first resistor element embedded within the dielectric layer, a second resistor element embedded within the dielectric layer, a first doped well within the substrate, the first doped well being aligned with the first resistor element, and a second doped well within the substrate, the second doped well being aligned with the second resistor element, the second doped well being non-contiguous with the first doped well.
Claims20
A semiconductor device comprising:
- a substrate;
- a dielectric layer over the substrate;
- a first resistor element embedded within the dielectric layer, the first resistor element comprising a straight line extending in a first single direction;
- a second resistor element embedded within the dielectric layer, the second resistor element comprising a straight line extending in a second single direction, the first resistor element being adjacent the second resistor element;
- a first doped well within the substrate, the first doped well being aligned with the first resistor element;
- and
- a second doped well within the substrate, the second doped well being aligned with the second resistor element, the second doped well being non-contiguous with the first doped well;
- wherein the first resistor element has a longitudinal length that extends beyond the first doped well.
A semiconductor device comprising:
- a plurality of non-contiguous doped wells within a substrate;
- a dielectric layer over the substrate;
- and
- an array of adjacent resistor elements positioned within the dielectric layer and above the plurality of non-contiguous doped wells such that each of the resistor elements is positioned above a different one of the plurality of non-contiguous doped wells, each one of the resistor elements comprising an elongated, straight line extending in a single direction that extends beyond the plurality of non-contiguous doped wells.
A semiconductor device comprising:
- a substrate comprising:
- a first well;
- and
- a second well that is non-contiguous with the first well;
- and
- a dielectric layer over the substrate, the dielectric layer comprising;
- a first elongated, straight resistor element embedded within, the first resistor element aligned with the first well, the first elongated, straight resistor element having a longitudinal length that is greater than that of the first well;
- and
- a second elongated, straight resistor element embedded within, the second resistor element aligned with the second well, the second resistor element being adjacent the first resistor element without other resistor elements therebetween;
- wherein the first resistor element is part of a first circuit and the second resistor element is part of a second circuit that is separate from the first circuit such that different voltages can be applied to the first and second resistor elements.
Dependencies are inferred from the claim text.