Back to results
US 10,651,167 B2Granted
Power FET with a resonant transistor gate
OwnerL. Pierre de Rochemontinventor
Life of this patent
Estimating the term…
Abstract
A semiconductor FET provides a resonant gate and source and drain electrodes, wherein the resonant gate is electromagnetically resonant at one or more predetermined frequencies.
Claims18
A semiconductor FET, comprising a resonant gate electrode that modulates transconductance between source and drain electrodes, wherein:
- a plurality of passive circuit elements including one or more inductor elements are embedded within the structure of the gate electrode that causes the gate electrode to respond electrically as a resonant transmission line;
- and,
- said resonant transmission line further consists of one or more resonant transmission line segments that are in turn connected in series to operate as a distributed network filter,
- such that, the semiconductor FET modulates transconductance at a resonant frequency or resonant frequency band characteristic to each resonant transmission line segment forming the distributed network filter.
1 more element
Dependencies are inferred from the claim text.