US 10,651,161 B2Granted

Semiconductor device

AssigneeKabushiki Kaisha Toshiba

InventorsMasahiro Koyama, Kentaro Ikeda, Kazuto Takao

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Abstract

According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.

Claims20

Dependent claims

A semiconductor device, comprising:

a first transistor being normally-off and including a first gate, a first source, a first drain, and a first semiconductor member, a direction from the first gate toward the first source crossing a first direction, the first direction being from the first semiconductor member toward the first drain, the first semiconductor member being provided between the first gate and the first drain in the first direction and between the first source and the first drain in the first direction;
a second transistor being normally-on and including a second gate, a second source, a second drain, and a second semiconductor member, an orientation from the first semiconductor member toward the first drain being the same as an orientation from the second semiconductor member toward the second gate, the same as an orientation from the second semiconductor member toward the second source, and the same as an orientation from the second semiconductor member toward the second drain, an orientation from the first semiconductor member toward the second semiconductor member crossing the first direction;
and
a first conductive member electrically connecting the first drain and the second source.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 15/909,552Filed 1 Mar 2018
Priority: JP 2017-23056630 Nov 2017
Published: US 2019/0164943 A130 May 2019
Granted: 12 May 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10W 90/00
Package configurations
H10W 72/325
Structures or relative sizes of die-attach connectors: die-attach connectors having a filler embedded in a matrix
H10W 72/353
Materials of die-attach connectors: not comprising solid metals or solid metalloids, e.g. ceramics
H10W 72/354
Not comprising solid metals or solid metalloids, e.g. ceramics: comprising polymers