Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a first substrate comprising a first dielectric material, the first dielectric material comprising a first recess pattern disposed therein, and the first dielectric material comprising a first conductive pad, wherein the first recess pattern comprises a plurality of first recess features that are electrically and mechanically isolated from each other and from the first conductive pad;
• a through substrate via formed in the first substrate;
• a second substrate comprising a second dielectric material, the second dielectric material comprising a second conductive pad;
• and
• a bonding structure formed between the first substrate and the second substrate, wherein the bonding structure comprises the first conductive pad bonded to the second conductive pad and the first dielectric material bonded to the second dielectric material.

A method of manufacturing a semiconductor device, the method comprising:

• providing a first wafer and a second wafer, wherein a through substrate via is formed in the first wafer;
• forming a first dielectric material in the first wafer;
• forming a first conductive pad in the first dielectric material;
• forming a first recess pattern in the first dielectric material, wherein the first recess pattern comprises a plurality of first recess features that are electrically and mechanically isolated from each other and from the first conductive pad;
• forming a second dielectric material in the second wafer;
• forming a second conductive pad in the second dielectric material;
• and
• bonding the first wafer and the second wafer.