Packages formed using RDL—last process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Chen-Hua Yu
Life of this patent
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Abstract
A method includes bonding a first device die and a second device die to a substrate, and filling a gap between the first device die and the second device die with a gap-filling material. A top portion of the gap-filling material covers the first device die and the second device die. Vias are formed to penetrate through the top portion of the gap-filling material. The vias are electrically coupled to the first device die and the second device die. The method further includes forming redistribution lines over the gap-filling material using damascene processes, and forming electrical connectors over and electrically coupling to the redistribution lines.
Claims20
A method comprising:
- forming a first plurality of bond pads contacting a blank substrate, wherein the blank substrate is formed of an inorganic material;
- bonding a first device die and a second device die to the blank substrate through the first plurality of bond pads;
- filling a gap between the first device die and the second device die with an inorganic gap-filling material, wherein a top portion of the inorganic gap-filling material covers the first device die and the second device die;
- forming redistribution lines over and electrically coupling to the first device die and the second device die, wherein the redistribution lines are formed using damascene processes;
- and
- forming electrical connectors over and electrically coupling to the redistribution lines.
A method comprising:
- attaching a first device die to a blank semiconductor substrate;
- depositing an inorganic dielectric material, wherein the inorganic dielectric material comprises portions on opposing sides of, and contacting, the first device die;
- forming a plurality of dielectric layers over the inorganic dielectric material;
- forming a plurality of redistribution lines in the plurality of dielectric layers using dual damascene processes;
- and
- performing a die saw to cut through the blank semiconductor substrate, the inorganic dielectric material, and the plurality of dielectric layers to form a plurality of packages.
A method comprising:
- bonding a device die to a blank semiconductor substrate, wherein an entirety of the blank semiconductor substrate comprises a homogeneous material, and the blank semiconductor substrate is bonded to the device die through an oxide layer;
- forming an inorganic dielectric material to embed the device die therein;
- forming redistribution lines over the inorganic dielectric material, wherein the redistribution lines are electrically coupled to the device die;
- and
- sawing through the blank semiconductor substrate and the inorganic dielectric material to form a package, wherein the package comprises a first portion of the blank semiconductor substrate, the device die, and a second portion of the inorganic dielectric material.
Dependencies are inferred from the claim text.