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US 10,651,144 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsBungo Tanaka, Keiji Wada, Satoshi Kageyama
Life of this patent
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Abstract
A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.
Claims23
A semiconductor device comprising:
- an insulating layer;
- a barrier electrode layer formed on and directly connected with a part of a region of a surface of the insulating layer;
- a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer;
- and
- an insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, that is in contact with the principal surface of the barrier electrode layer, and that is not in contact with the insulating layer.
2 more elements
A semiconductor device comprising:
- an insulating layer;
- a barrier electrode layer formed on a part of a region of the insulating layer;
- a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer;
- and
- an insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, that is in contact with the principal surface of the barrier electrode layer, and that is separated from the insulating layer;
- and
- a via electrode that passes through the insulating layer,
- wherein an exposed surface of the via electrode is formed so as to be flush with a surface of the insulating layer and to be electrically contacted with the barrier electrode layer.
5 more elements
Dependencies are inferred from the claim text.