Micro-connection structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Hsiung Lu, Chen-Shien Chen, Chen-En Yen, Cheng-Jen Lin, Chin-Wei Kang, Kai-Jun Zhan
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Abstract
A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.
Claims20
A micro-connection structure, comprising:
- an under bump metallurgy (UBM) pad, electrically connected with at least one metallic contact of a substrate, wherein the UBM pad includes a first pattern and a second pattern, and the first pattern is disposed on and surrounded by the second pattern;
- a bump, disposed on the first pattern of the UBM pad and electrically connected with the UBM pad;
- and
- an insulating ring surrounding the bump and the UBM pad,
- wherein the bump is separate and isolated from the insulating ring by an open trench between the insulating ring and the bump.
A micro-connection structure, comprising:
- an under bump metallurgy (UBM) pad, disposed on and electrically connected with at least one metallic contact of a substrate;
- a bump, disposed on the UBM pad and electrically connected with the UBM pad;
- an insulating ring surrounding the bump and the UBM pad;
- and
- a barrier layer, disposed on and covering the insulating ring,
- wherein the bump is separate and isolated from the barrier layer and the insulating ring, and the UBM pad is lower than the barrier layer located on a top surface of the insulating ring.
A method for forming a micro-connection structure, comprising:
- providing a substrate having metallic contacts;
- forming an insulating pattern over the substrate;
- depositing a barrier layer covering the insulating pattern and over the substrate;
- forming a filling layer on the barrier layer and over the insulating pattern;
- patterning the filling layer and the barrier layer to form openings, where the openings expose the metallic contacts;
- forming a bonding enhancement layer and a seed layer sequentially on the patterned filling layer and on the exposed metallic contacts;
- forming seed patterns within the openings;
- forming bumps on the seed patterns in the openings;
- and
- removing the patterned filling layer.
Dependencies are inferred from the claim text.