Back to results
US 10,651,125 B2Granted
Replacement metal cap by an exchange reaction
AssigneeInternational Business Machines Corporation
InventorsJames J. Kelly, Cornelius Brown Peethala
Life of this patent
Estimating the term…
Abstract
Various methods and structures for fabricating BEOL metallization layer including at least one bulk cobalt contact, the at least one bulk cobalt contact including a replacement non-cobalt metal cap integral to the at least one bulk cobalt contact. The method includes performing selective deposition, by a chemical exchange reaction of metal between a non-cobalt metal and Cobalt in the at least one bulk cobalt contact, of the replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact.
Claims11
A method for fabricating at least one metal contact for a semiconductor structure, the method comprising:
- providing a semiconductor stack disposed on a circuit supporting substrate;
- patterning a top layer of the semiconductor stack to provide at least one semiconductor contact;
- deposition of Cobalt fill in a first BEOL metallization layer disposed directly on the semiconductor stack thereby providing a bulk cobalt contact in the first BEOL metallization layer, wherein the bulk cobalt contact being disposed directly on the at least one semiconductor contact;
- perform selective deposition, by a chemical exchange reaction of metal between a non-cobalt metal and Cobalt in the bulk cobalt contact, of a replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact;
- and
- perform deposition of a metal fill in a trench in a second BEOL metallization layer disposed directly on the first BEOL metallization layer, the metal fill forming a metal contact for the at least one semiconductor contact, the metal contact disposed on the replacement non-cobalt metal cap integrally formed in the top surface region of the bulk cobalt contact in the first BEOL metallization layer.
3 more elements
A method for fabricating a metal contact for a semiconductor structure, the method comprising:
- providing a semiconductor stack disposed on a circuit supporting substrate;
- patterning a top layer of the semiconductor stack to provide a semiconductor contact;
- deposition of Cobalt fill in a first BEOL metallization layer disposed directly on the semiconductor stack thereby providing a bulk cobalt contact in the first BEOL metallization layer, wherein the bulk cobalt contact being disposed directly on the semiconductor contact;
- build a second BEOL metallization layer disposed directly on the first BEOL metallization layer;
- perform a vertical etch to form a trench in the second BEOL metallization layer to expose the bulk cobalt contact in the first BEOL metallization layer;
- perform selective deposition, by a chemical exchange reaction of metal between a non-cobalt metal and Cobalt in the bulk cobalt contact, of a replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact;
- perform deposition of a conductive liner in the trench in the second BEOL metallization layer and directly on the replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact;
- and
- perform deposition of a metal fill on the conductive liner in the trench in the second BEOL metallization layer disposed directly on the first BEOL metallization layer, the metal fill forming a metal contact for the semiconductor contact.
6 more elements
A method for fabricating a metal contact for a semiconductor structure, the method comprising:
- providing a semiconductor stack disposed on a circuit supporting substrate;
- patterning a top layer of the semiconductor stack to provide a semiconductor contact;
- deposition of Cobalt fill in a first BEOL metallization layer disposed directly on the semiconductor stack thereby providing a bulk cobalt contact in the first BEOL metallization layer, wherein the bulk cobalt contact being disposed directly on the semiconductor contact;
- perform selective deposition, by a chemical exchange reaction of metal between a non-cobalt metal and Cobalt in the bulk cobalt contact, of a replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact;
- build a second BEOL metallization layer disposed directly on the first BEOL metallization layer;
- perform a vertical etch to form a trench in the second BEOL metallization layer to expose the replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact in the first BEOL metallization layer;
- perform deposition of a conductive liner in the trench in the second BEOL metallization layer and directly on the replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact;
- and
- perform deposition of a metal fill on the conductive liner in the trench in the second BEOL metallization layer disposed directly on the first BEOL metallization layer, the metal fill forming a metal contact for the semiconductor contact.
6 more elements
Dependencies are inferred from the claim text.