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US 10,651,124 B2Granted
Semiconductor package and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsYusheng Lin, Yenting Wen, George Chang
Life of this patent
Estimating the term…
Abstract
Implementations of semiconductor packages may include: a prefabricated electrically conductive section; two or more metal oxide semiconductor field effect transistors (MOSFET) physically coupled together; and a back metal coupled to the two or more MOSFETs; wherein the electrically conductive section may be coupled to the back metal and may be configured to electrically couple the two or more MOSFETs together during operation of the two or more MOSFETs.
Claims9
A semiconductor package comprising:
- a prefabricated aluminum portion;
- two or more metal oxide semiconductor field effect transistors (MOSFET) physically coupled together;
- and
- a back metal coupled to the two or more MOSFETs;
- wherein the prefabricated aluminum slab is coupled directly to the back metal and is configured to electrically couple the two or more MOSFETs together during operation of the two or more MOSFETs;
- wherein a thickness of the prefabricated aluminum slab portion is between 25 microns to 200 microns.
3 more elements
A semiconductor package comprising:
- a prefabricated electrically conductive plate;
- two or more metal oxide semiconductor field effect transistors (MOSFET) physically coupled together;
- and
- a back metal coupled to the two or more MOSFETs;
- wherein the prefabricated electrically conductive plate is directly coupled to the back metal and is configured to electrically couple the two or more MOSFETs together during operation of the two or more MOSFETs;
- wherein a thickness of the prefabricated electrically conductive plate is between 25 microns to 200 microns.
3 more elements
Dependencies are inferred from the claim text.