Selective plating of semiconductor package leads

A method of forming a semiconductor device, comprising:

• providing a semiconductor package comprising an electrically insulating mold compound body, a semiconductor die that is encapsulated by the mold compound body, a plurality of electrically conductive leads that each protrude out of the mold compound body, and a metal heat slug, the metal heat slug comprising a rear surface that is exposed from the mold compound body;
• performing an electroplating process on the semiconductor package that forms a metal coating on the outer portions of the leads that are exposed from the mold compound body;
• and
• preventing the metal coating from forming on the rear surface of the heat slug during the electroplating process.

A packaged semiconductor device, comprising:

• an electrically insulating mold compound body;
• a metal heat slug comprising a rear surface that is exposed from the mold compound body and a die attach surface opposite the rear surface;
• a semiconductor die that is encapsulated by the mold compound body and mounted on the heat slug;
• a plurality of electrically conductive leads, each of the leads comprising outer portions that are exposed from the mold compound body;
• a metal coating covering the outer portions of each of the leads;
• and
• a planar metallic heat sink interface surface which is:
• exposed from the mold compound body;
• thermally coupled to the semiconductor die via the heat slug;
• and
• substantially devoid of the metal coating.