Substrates, structures within a scribe-line area of a substrate, and methods of forming a conductive line of a redistribution layer of a substrate and of forming a structure within a scribe-line area of the substrate

A substrate comprising:

• a pair of immediately-adjacent integrated-circuit dies having scribe-line area there-between;
• at least one of the dies comprising insulting material above integrated circuitry, the insulating material having an opening therein that extends elevationally inward to an upper conductive node of integrated circuitry within the one die, the one die comprising a conductive line of a redistribution layer (RDL) above the insulating material, the RDL-conductive line extending elevationally inward into the opening and being directly electrically coupled to the upper conductive node, the insulating material having a minimum elevational thickness from an uppermost surface of the upper conductive node to an uppermost surface of the insulating material that is immediately-adjacent the insulating-material opening;
• insulator material above a conductive test pad in the scribe-line area, the insulator material having an opening therein that extends elevationally inward to an uppermost surface of the conductive test pad, the insulator material having a minimum elevational thickness from the conductive-test-pad uppermost surface to an uppermost surface of the insulator material that is immediately-adjacent the insulator-material opening and that is less than said minimum elevational thickness of the insulating material;
• the insulating-material opening having at least one annular ledge elevationally between a top and a bottom of the insulating-material opening;
• a first insulative material in the insulating-material opening;
• and
• a second insulative material in the insulating-material opening, the second insulative material being a top and directly against the first insulative material in the insulating-material opening and being of different composition from that of the first insulative material.