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US 10,651,085 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hao Chang, Jia-Chuan You, Yu-Ming Lin, Chih-Hao Wang, Wai-Yi Lien
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Abstract
A method of forming a semiconductor device includes forming an ILD structure over a source/drain region, forming a source/drain contact in the ILD structure and over the source/drain region, removing a portion of the source/drain contact such that a hole is formed in the ILD structure and over a remaining portion of the source/drain contact, forming a hole liner lining a sidewall of the hole, and forming a conductive structure in the hole.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a channel region and a source/drain region;
- a source/drain contact over the source/drain region;
- a conductive structure over the source/drain contact;
- an interlayer dielectric (ILD) layer surrounding the conductive structure, wherein the ILD layer is separated from the conductive structure;
- a dielectric liner between the ILD layer and the conductive structure and over the source/drain contact;
- a gate structure over the channel region;
- and
- a gate contact extending upwardly from a top surface of the gate structure to a position higher than a top end of the dielectric liner.
5 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a source/drain region and a channel region;
- a source/drain contact over the source/drain region;
- a conductive structure over a top surface of the source/drain contact;
- a gate electrode over the channel region;
- a gate spacer alongside the gate electrode;
- and
- a dielectric liner around the conductive structure, wherein a bottom surface of the dielectric liner is in contact with the top surface of the source/drain contact and terminates before reaching the gate electrode, and a sidewall of the dielectric liner is in contact with the gate spacer.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a source/drain region and a channel region;
- a source/drain contact over the source/drain region;
- a conductive structure over the source/drain contact;
- a gate electrode over the channel region;
- a gate spacer alongside the gate electrode;
- a dielectric liner over the source/drain contact, wherein an interface between the dielectric liner and the source/drain contact is at a position lower than a top surface of the gate spacer;
- and
- a gate contact over the gate electrode, the gate contact having a height greater than a height of the dielectric liner.
5 more elements
Dependencies are inferred from the claim text.