Microelectronic devices comprising manganese-containing conductive structures, and related electronic systems and methods

An electronic system, comprising:

• an input device;
• an output device;
• a processor device operably coupled to the input device and the output device;
• and
• a memory device operably coupled to the processor device and comprising:
• a first conductive material within a first dielectric material;
• a second conductive material adjacent to the first conductive material and within a second dielectric material adjacent to the first conductive material;
• at least a first barrier material between the first conductive material and the second conductive material;
• and
• manganese particles within the first conductive material and adjacent to the first barrier material.

An electronic device, comprising:

• a copper interconnection;
• a tungsten plug in direct contact with a portion of the copper interconnection;
• and
• manganese particles segregated in the copper interconnection around the portion of the copper interconnection.

A method of forming a microelectronic device, the method comprising:

• forming openings in a first dielectric material;
• forming a first barrier material within the openings in the first dielectric material;
• forming a seed material comprising copper and manganese on the first barrier material;
• forming a first conductive material on the seed material;
• forming a second dielectric material on the first dielectric material and the first conductive material;
• forming additional openings in the second dielectric material;
• forming a second barrier material within the additional openings in the second dielectric material;
• forming a second conductive material on the second barrier material;
• and
• segregating at least some of the manganese of the seed material to a location proximate an interface between the first conductive material and the second barrier material.