Diffusion barriers
AssigneeIntel Corporation
InventorsDaniel J. Zierath, Jason A. Farmer, Daniel B. Bergstrom
Life of this patent
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Abstract
In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.
Claims25
A semiconductor device, the semiconductor device comprising a chemical compound that includes a transition metal, a post-transition metal, a metalloid, and a non-metal, wherein the compound is tungsten-aluminum-silicon-carbon- nitride (WAISiCN) or tantalum-aluminum-silicon-carbon-nitride (TaAlSiCN).
A semiconductor device, the semiconductor device comprising a chemical compound, wherein the compound includes tantalum-ruthenium-aluminum-carbon-nitride (TaRuAICN), tungsten-ruthenium-aluminum-carbon-nitride (WRuAICN), tantalum-ruthenium-boron-carbon-nitride (TaRuBCN), or tungsten-ruthenium-boron-carbon-nitride (WRuBCN).
A semiconductor device, the semiconductor device comprising a chemical compound, wherein the compound includes a transition metal, a post-transition metal, a metalloid, and a nonmetal, wherein the compound is zirconium-ruthenium-silicon-carbon-nitride (ZrRuSiCN) or zirconium-silicon-carbon-nitride (ZrSiCN).
A process of manufacturing an integrated circuit, the process comprising:
- depositing a dielectric;
- forming, in the dielectric, an opening for an interconnect;
- depositing, in the opening, a barrier material, the barrier material comprising a chemical compound, wherein the chemical compound includes one or more of tungsten-aluminum-silicon-carbon-nitride (WAISiCN), tantalum-aluminum-silicon-carbon-nitride (TaAlSiCN), tantalum-ruthenium-aluminum-carbon-nitride (TaRuAICN), tungsten-ruthenium-aluminum-carbon-nitride (WRuAICN), tantalum-ruthenium-boron-carbon-nitride (TaRuBCN), tungsten-ruthenium-boron-carbon-nitride (WRuBCN), zirconium-ruthenium-silicon-carbon-nitride(ZrRuSiCN), and zirconium-silicon-carbon-nitride (ZrSiCN);
- and
- depositing, in the opening with the barrier material, a conductive material.
Dependencies are inferred from the claim text.