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US 10,651,055 B2Granted
Post-passivation interconnect structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Jen Lin, Tsung-Ding Wang, Chien-Hsun Lee
Life of this patent
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Abstract
A semiconductor device includes a passivation layer formed on a semiconductor substrate, a protective layer overlying the passivation layer and having an opening, an interconnect structure formed in the opening of the protective layer, a bump formed on the interconnect structure, and a molding compound layer overlying the interconnect structure and being in physical contact with a lower portion of the bump.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a contact pad on a substrate:
- forming a passivation layer on the substrate and the contact pad, the passivation layer having a first opening exposing the contact pad, the passivation layer extending along sidewalls of the contact pad;
- forming a polymer layer overlying the passivation layer the polymer layer having a second opening exposing the contact pad, the second opening being within the first opening;
- forming a protective layer over the polymer layer and in the second opening;
- forming a third opening in the protective layer, the third opening exposing the contact pad and including the second opening;
- forming an interconnect structure in the third opening of the protective layer;
- forming a bump formed on the interconnect structure;
- and
- forming a molding compound layer surrounding the bump.
6 more elements
A method of forming a semiconductor device, the method comprising:
- forming a passivation layer over a substrate, the passivation layer having a first opening exposing a contact pad;
- forming a protective layer over the passivation layer, the protective layer comprising a first protective layer and a second protective layer, the second protective layer being over the first protective layer, the first protective layer being a single layer and having a second opening, the first protective layer extending along an upper surface and sidewalls of the passivation layer, the first protective layer contacting the contact pad;
- forming a conductive layer in the first opening and the second opening, the conductive layer comprising a first material layer, the first material layer having a single composition, the first material layer extending from an upper surface of the second protective layer to the contact pad, an upper surface of the conductive layer being level with an upper surface of the second protective layer, the conductive layer having an entire top surface substantially co-planar with a top surface of the second protective layer;
- placing a bump directly on the conductive layer, the conductive layer physically contacting the first protective layer directly below the bump;
- and
- forming a molding compound layer in physical contact with the second protective layer, the conductive layer and a lower portion of the bump.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming a contact pad on a wafer scale substrate;
- forming a first protective layer over a contact pad, the first protective layer having a first opening exposing the contact pad, the first protective layer contacting the contact pad;
- forming a first polymer layer over the first protective layer;
- patterning the first polymer layer to form a second opening, the second opening exposing the contact pad;
- forming a second polymer layer over the first polymer layer and in the second opening;
- patterning the second polymer layer to form a third opening and a fourth opening, the third opening including the second opening and exposing the contact pad, the fourth opening exposing a top surface of the first polymer layer, the third opening and the fourth opening being separated by a portion of the patterned second polymer layer;
- after patterning the second polymer layer, forming a post-passivation interconnect (PPI) structure in the third and fourth openings, wherein the PPI structure comprises a first layer extending from the contact pad to an upper surface of the second polymer layer;
- and
- forming a molding compound directly on the second polymer layer.
6 more elements
Dependencies are inferred from the claim text.