Embedded metal insulator metal structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Shiang Liao, Chewn-Pu Jou
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Shiang Liao, Chewn-Pu Jou
Estimating the term…
The present disclosure describes a method of forming a metal insulator metal (MIM) decoupling capacitor that can be integrated (or embedded) into a 3D integrated circuit package such as, for example, a chip-on-wafer-on-substrate (CoWoS) chip package or an integrated fan-out (InFO) chip package. For example, the method includes providing a glass carrier with a protective layer over the glass carrier. The method also includes forming a capacitor on the protective layer by: forming a bottom metal layer on a portion of the protective layer; forming one or more first metal contacts and a second metal contact on the bottom metal layer, where the one or more first metal contacts have a width larger than the second metal contact; forming a dielectric layer on the one or more first metal contacts; and forming a top metal layer on the dielectric layer.
A method of forming an interposer structure, the method comprising:
An interposer structure, comprising:
A system, comprising:
Dependencies are inferred from the claim text.