Double patterning method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ying Lee, Jyu-Horng Shieh
Life of this patent
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Abstract
In some embodiments, the disclosure relates to an integrated circuit structure. The integrated circuit structure has a substrate and a first hard mask layer over the substrate. An island of a second hard mask layer is arranged on the first hard mask layer and is set back from sidewalls of the first hard mask layer. A sacrificial mask is disposed over the island of the second hard mask layer. The sacrificial mask has sidewalls that define an opening exposing upper surfaces of the first hard mask layer and the island of the second hard mask layer. The island of the second hard mask layer extends from below the sacrificial mask to laterally past the sidewalls of the sacrificial mask.
Claims20
An integrated circuit structure, comprising:
- a substrate;
- a first hard mask layer over the substrate;
- an island of a second hard mask layer arranged on the first hard mask layer and set back from sidewalls of the first hard mask layer;
- a sacrificial mask disposed over the island of the second hard mask layer and having sidewalls that define an opening exposing upper surfaces of the first hard mask layer and the island of the second hard mask layer, wherein the island of the second hard mask layer extends from below the sacrificial mask to laterally past the sidewalls of the sacrificial mask;
- and
- spacers disposed over the sacrificial mask, the spacers respectively having a first outer sidewall that is directly over the upper surface of the island of the second hard mask layer.
An integrated circuit structure, comprising:
- a substrate;
- a first hard mask layer over the substrate;
- an island of a second hard mask layer arranged on the first hard mask layer and set back from sidewalls of the first hard mask layer;
- and
- a sacrificial mask disposed over the island of the second hard mask layer and having sidewalls that define an opening exposing upper surfaces of the first hard mask layer and the island of the second hard mask layer, wherein the island of the second hard mask layer extends from below the sacrificial mask to laterally past the sidewalls of the sacrificial mask, wherein the sacrificial mask contacts opposing sidewalls of the island of the second hard mask layer.
An integrated circuit structure, comprising:
- a substrate;
- a first hard mask layer over the substrate;
- an island of a second hard mask layer arranged on the first hard mask layer and set back from sidewalls of the first hard mask layer;
- a sacrificial mask disposed over the island of the second hard mask layer and having sidewalls that define an opening exposing upper surfaces of the first hard mask layer and the island of the second hard mask layer, wherein the island of the second hard mask layer extends from below the sacrificial mask to laterally past the sidewalls of the sacrificial mask;
- wherein the island of the second hard mask layer extends laterally past the sidewalls of the sacrificial mask along a first line extending along a first direction;
- and
- wherein the sacrificial mask extends laterally past sidewalls of the island of the second hard mask layer along a second line extending along a second direction that is perpendicular to the first direction.
Dependencies are inferred from the claim text.