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US 10,651,044 B2Granted
Processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsMichiko Nakaya, Masanobu Honda
Life of this patent
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Abstract
A processing method including a first step of supplying a first gas including a carbon-containing gas and an inert gas into an inside of a chamber and a second step of generating plasma from the supplied first gas by applying high frequency power for generating plasma and causing a chemical compound including organic matter on a pattern of a predetermined film formed on an object to be processed, wherein a ratio of the carbon-containing gas relative to the inert gas included in the first gas is 1% or less.
Claims9
A processing method comprising:
- a first step of supplying a first gas including a carbon-containing gas and an inert gas into an inside of a chamber;
- and
- a second step of generating plasma from the supplied first gas by applying radio frequency power for generating plasma and causing a chemical compound including organic matter on a pattern of a predetermined film formed on an object to be processed, the second step causing the chemical compound including the organic matter only on an upper surface of the predetermined film formed on an object to be anisotropically deposited,
- wherein a ratio of the carbon-containing gas relative to the inert gas included in the first gas is 1% or less.
1 more element
Dependencies are inferred from the claim text.