Semiconductor device
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorYusuke Fukuda
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor layer of silicon carbide including a plurality of layers disposed on a main surface side; an electrode layer that is one of the plurality of layers, wherein the electrode layer has an electrode connecting surface to which a conductive connecting member is connected, and the electrode layer is composed mainly of silver; and a first metal layer that is a layer, different from the electrode layer, among the plurality of layers, wherein the first metal layer has a first bonding surface bonded onto the electrode layer such that the electrode connecting surface is exposed to an outside, and a second bonding surface electrically connected to the semiconductor layer, and the first metal layer is composed mainly of titanium carbide.
Claims8
A semiconductor device comprising:
- a semiconductor layer including silicon carbide and having a main surface;
- an electrode layer over the main surface of the semiconductor layer, wherein
- the electrode layer has a first bottom surface facing the semiconductor layer, a top surface opposing the bottom surface, and a side surface, and
- the electrode layer being a single layer mainly including silver;
- a conductive wire in direct physical contact with the top surface of the electrode layer;
- and
- a first metal layer mainly including titanium carbide, wherein
- the first metal layer is configured to prevent the silver included in the electrode layer from diffusing into the semiconductor layer, and
- the first metal layer covers, and is in direct physical contact with, the bottom and side surfaces of the electrode layer, and
- the first metal layer is electrically connected to the main surface of the semiconductor layer.
Dependencies are inferred from the claim text.