Semiconductor device structures and methods for manufacturing the same
AssigneeVanguard International Semiconductor Corporation
InventorsCheng-Wei Chou, Hsin-Chih Lin, Yu-Chieh Chou
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Abstract
A method for manufacturing a semiconductor device structure is provided. The method includes providing a base substrate and forming a buffer layer on the base substrate. The method also includes forming a patterned silicon layer on the buffer layer. The patterned silicon layer has an opening to expose a portion of the buffer layer. The method further includes epitaxially growing a patterned channel layer and a patterned barrier layer on a top surface of the patterned silicon layer sequentially. In addition, the method includes forming a gate electrode on the patterned barrier layer.
Claims20
A method for manufacturing a semiconductor device structure, comprising:
- providing a base substrate;
- forming a buffer layer on the base substrate;
- forming a patterned silicon layer on the buffer layer, wherein the patterned silicon layer has an opening to expose a portion of the buffer layer;
- epitaxially growing a patterned channel layer and a patterned barrier layer on a top surface of the patterned silicon layer sequentially so that a carrier channel is formed at an interface between the patterned channel layer and the patterned barrier layer;
- and
- forming a gate electrode on the patterned barrier layer.
A semiconductor device structure, comprising:
- a base substrate;
- a buffer layer disposed on the base substrate;
- a patterned silicon layer covering a portion of the buffer layer;
- a channel layer disposed on a top surface of the patterned silicon layer;
- a barrier layer disposed on the channel layer, wherein a carrier channel formed at an interface between the channel layer and the barrier layer;
- and
- a gate electrode disposed on the barrier layer.
Dependencies are inferred from the claim text.