Method for producing an epitaxial layer on a growth plate
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsHubert Moriceau, Matthew Charles, Christophe Morales
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Abstract
The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.
Claims18
A method for producing an epitaxial layer on at least one growth plate, the method comprising:
- (i) adhering at least one growth plate comprising a chamfer on a masking substrate, such that the masking substrate masks a first surface and exposes a second surface of said at least one plate, said second surface comprising the chamfer and said first surface being at least partially delimited by the chamfer,
- (ii) after said adhering, depositing at least one protective film, at least on one part of the chamfer of said at least one growth plate,
- (iii) removing said at least one growth plate from the masking substrate, and
- (iv) after said removing, depositing the epitaxial layer from said first surface of said at least one growth plate.
Dependencies are inferred from the claim text.