Cut metal gate process for reducing transistor spacing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Abstract
A semiconductor structure includes a substrate; first and second fins extending from the substrate and oriented lengthwise generally along a first direction; an isolation feature over the substrate and separating bottom portions of the first and the second fins; first and second epitaxial semiconductor features over the first and the second fins, respectively; and a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features. A maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.
Claims20
A semiconductor structure, comprising:
- a substrate;
- first and second fins extending from the substrate and oriented lengthwise generally along a first direction;
- an isolation feature over the substrate and separating bottom portions of the first and the second fins;
- first and second epitaxial semiconductor features over the first and the second fins, respectively;
- and
- a first dielectric feature sandwiched between the first and the second epitaxial semiconductor features, wherein a maximum width of the first dielectric feature is smaller than a width of the isolation feature between the first and the second fins along a second direction perpendicular to the first direction.
A semiconductor structure, comprising:
- a substrate;
- first and second fins extending from the substrate and oriented lengthwise generally along a first direction;
- an isolation feature over the substrate and between bottom portions of the first and the second fins;
- first and second epitaxial semiconductor features over the first and the second fins, respectively;
- and
- a first dielectric feature between and in contact with the first and the second epitaxial semiconductor features, wherein a first sidewall of the first dielectric feature extends from the isolation feature to a point above the first epitaxial semiconductor feature.
A semiconductor structure, comprising:
- a substrate;
- first and second fins extending from the substrate;
- an isolation feature over the substrate and between bottom portions of the first and the second fins;
- first and second epitaxial semiconductor features over the first and the second fins, respectively;
- and
- a first dielectric feature between the first and the second epitaxial semiconductor features, wherein a middle portion of the first dielectric feature contacts the first and the second epitaxial semiconductor features, and a lower portion of the first dielectric feature below the middle portion is spaced from the first and the second epitaxial semiconductor features.
Dependencies are inferred from the claim text.