Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same

A cleaning method, comprising removing a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atomic % or more of tungsten, wherein the method comprises:

• applying a cleaning solution to the photoresist on the surface of the semiconductor element, wherein the cleaning solution consists of:
• 0.01 to 5% by mass of an alkaline earth metal compound;
• 0.1 to 30% by mass of an inorganic alkali, an organic alkali, or both;
• water;
• and
• optionally, at least one selected from the group consisting of an oxidant other than a peroxide, a metal anticorrosive, a water-soluble organic solvent, a reducing agent, and a chelating agent,
• wherein the alkaline earth metal compound is at least one selected from the group consisting of barium nitrate, barium chloride, barium acetate, barium oxide, barium bromide, barium carbonate, barium fluoride, barium iodide, barium sulfate, barium phosphate, calcium nitrate and strontium chloride, and
• wherein the organic alkali is at least one selected from the group consisting of methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, propylamine, dipropylamine, butylamine, butylamine, dibutylamine, pentlyamine, hexylamine, heptylamine, octylamine, ethanolamine, 2-methylethanolamine, diethanolamine, triethanolamine and 1-amino-2-propanol.