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US 10,651,003 B2Granted
Ion implanting method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Ying Tsai, Ming-Hui Li, Chia-Cheng Liu
Life of this patent
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Abstract
An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of N2H4, CH3N2H3, C6H5N2H3, CFCl3 and C(CH3)3F.
Claims20
An ion implanting method, the method comprising:
- providing or receiving a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol, wherein the gas comprises NF3, NH3, N2H4, CH3N2H3, C6H5N2H3, CFCl3, C(CH3)3F, or combinations thereof;
- ionizing the gas to form a plurality of types of ions;
- extracting at least one of the types of the ions from the plurality of types of the ions;
- and
- directing said at least one of the types of the ions to implant a substance such that a doped region is formed in the substance, wherein directing said at least one of the types of the ions comprises:
- forming a mask layer on the substance;
- patterning the mask layer to expose a portion of the substance;
- and
- directing said at least one of the types of the ions to implant the exposed portion of the substance.
6 more elements
An ion implanting method, comprising:
- providing or receiving a substance;
- providing a gas comprising nitrogen atoms, fluorine atoms and hydrogen atoms, wherein the gas includes NH3 and NF3 and a molar ratio of NH3:NF3 ranges from about 0.05:1 to about 0.25:1;
- ionizing the gas to form nitrogen ions, fluorine ions and hydrogen ions;
- and
- directing at least one of the nitrogen ions and the fluorine ions to implant the substance.
2 more elements
An ion implanting method, comprising:
- providing or receiving a gas having a bonding energy ranged from about 220 to about 450 kJ/mol, wherein the gas comprises NF3 and NH3, and a molar ratio of NH3:NF3 ranges from about 0.05:1 to about 0.25:1;
- ionizing the gas to form a plurality of types of ions;
- extracting one of the types of the ions to form an ion beam;
- accelerating or decelerating the ions of the ion beam;
- and
- directing the ions of the ion beam to implant a substance such that a doped region is formed in the substance.
3 more elements
Dependencies are inferred from the claim text.