Semiconductor device

A semiconductor device comprising:

• an LC circuit comprised of a spiral inductor provided over a semiconductor substrate and a capacitive element coupled with the spiral inductor,
• wherein the spiral inductor includes a central area encircled with a metal wiring and a peripheral area other than the central area,
• wherein the capacitive element is formed in an upper-layer or a lower-layer position corresponding to the peripheral area other than the central area,
• wherein the LC circuit includes a first LC circuit and a second LC circuit, the semiconductor device further comprising:
• first and second transistors coupled with the first and second LC circuits;
• and
• a resistance element,
• wherein one side of a first spiral inductor of the first LC circuit is coupled with an input node,
• wherein an other side of the first spiral inductor of the first LC circuit is coupled with a gate of the first transistor whose source side is coupled with first voltage and which is coupled in parallel with a first capacitive element of the first LC circuit,
• wherein one side of a second spiral inductor of the second LC circuit is coupled with second voltage via the resistance element,
• wherein an other side of the second spiral inductor of the second LC circuit is coupled with the second transistor in parallel with a second capacitive element of the second LC circuit coupled with an output node, and
• wherein one side of the second transistor is coupled with the second spiral inductor, an other side of the second transistor is coupled with the first transistor, and a gate of the second transistor is coupled with a junction node between the resistance element and the second spiral inductor.