Electronic device, non-transitory computer-readable storage medium, and method of controlling electronic device

A non-transitory computer-readable storage medium comprising:

• memory cells having a plurality of threshold voltage distributions and storing operation codes executable by a processing device,
• wherein the operation codes are codes used for performing:
• calculating average threshold voltages of the plurality of threshold voltage distributions and setting a temporary read voltage corresponding to average threshold voltages of adjacent threshold voltage distributions among the plurality of threshold voltage distributions;
• reading read values from the memory cells by applying the temporary read voltage to the memory cells, counting a number of memory cells each of which a read value is a predetermined value, as a reference value, and determining a standard value corresponding to the temporary read voltage;
• calculating an error rate based on the reference value and the standard value;
• setting an offset value by reflecting the error rate as a difference between the average threshold voltages of the adjacent threshold voltage distributions;
• and
• setting a read voltage by applying the offset value to the temporary read voltage.

An operating method for an electronic device including memory cells having a plurality of threshold voltage distributions, the operating method comprising:

• calculating average threshold voltages of the plurality of threshold voltage distributions and setting a temporary read voltage corresponding to average threshold voltages of adjacent threshold voltage distributions among the plurality of threshold voltage distributions;
• reading read values from the memory cells by applying the temporary read voltage to the memory cells;
• counting a number of memory cells each of which a read value is a predetermined value, as a reference value;
• determining a standard value corresponding to the temporary read voltage;
• calculating an error rate based on the reference value and the standard value;
• setting an offset value by reflecting the error rate as a difference between the average threshold voltages of the adjacent threshold voltage distributions;
• and
• generating a read voltage by applying the offset value to the temporary read voltage.