Pre-read technique for multi-pass programming of flash memory
AssigneeYangtze Memory Technologies Co., Ltd.
InventorXin Yang
Life of this patent
Estimating the term…
Abstract
A flash memory device includes: a flash memory array; and control logic. The control logic is coupled to the flash memory array. The control logic is arranged to: program a plurality of memory cells of the flash memory array according to at least one first page of data in a first programming pass; sense the memory cells that are programmed in the first programming pass to obtain the at least one first page of data and preserve the at least one first page of data in a first register circuit inside the flash memory device before a second programming pass; and program the memory cells according to the at least one first page of data and a second page of data in the second programming pass.
Claims12
A flash memory device, comprising:
- a flash memory array;
- a control logic, coupled to the flash memory array, and arranged to:
- program a plurality of memory cells of the flash memory array according to at least one first page of data in a first programming pass;
- sense states of the memory cells that are programmed in the first programming pass to obtain the at least one first page of data and preserve the at least one first page of data in a first register circuit inside the flash memory device before a second programming pass;
- and
- program the memory cells according to the at least one first page of data and a second page of data in the second programming pass.
A method for performing a two-pass programming in a flash memory device having a flash memory array and control logic, the method comprising:
- programming a plurality of memory cells of the flash memory array according to at least one first page of data in in a first programming pass;
- sensing the memory cells that are programmed in the first programming pass to obtain the at least one first page of data and preserving the at least one first page of data in a first register circuit inside the flash memory device before a second programming pass;
- and
- programming the memory cells according to the at least one first page of data and a second page of data in the second programming pass.
Dependencies are inferred from the claim text.