Non-contact electron beam probing techniques and related structures

An apparatus, comprising:

• a plurality of first access lines at a first level of the apparatus, the plurality of first access lines comprising a first subset and a second subset, wherein:
• each first access line in the first subset is coupled with a ground reference;
• each first access line in the second subset is isolated from the ground reference;
• and
• a first access line included in the first subset is interposed between a first immediately neighboring first access line included in the second subset and a second immediately neighboring first access line included in the second subset;
• and
• a plurality of second access lines at a second level of the apparatus above the first level, wherein each second access line is configured to be:
• isolated from a corresponding first access line of the plurality of first access lines when a voltage differential between the second access line and the corresponding first access line is below a threshold voltage of a chalcogenide material that is interposed between the second access line and the corresponding first access line;
• and
• coupled with the corresponding first access line of the plurality of first access lines when the voltage differential between the second access line and the corresponding first access line exceeds the threshold voltage of the chalcogenide material.

An apparatus, comprising:

• a plurality of first access lines at a first level of the apparatus, the plurality of first access lines comprising a first subset and a second subset, wherein:
• each first access line in the first subset is coupled with a ground reference;
• each first access line in the second subset is isolated from the ground reference;
• and
• a group of first access lines included in the first subset is interposed between a first immediately neighboring first access line included in the second subset and a second immediately neighboring first access line included in the second subset;
• and
• a plurality of second access lines at a second level of the apparatus above the first level, wherein each second access line is configured to be:
• isolated from a corresponding first access line of the plurality of first access lines when a voltage differential between the second access line and the corresponding first access line is below a threshold voltage of a chalcogenide material that is interposed between the second access line and the corresponding first access line;
• and
• coupled with the corresponding first access line of the plurality of first access lines when the voltage differential between the second access line and the corresponding first access line exceeds the threshold voltage of the chalcogenide material.

An apparatus, comprising:

• a plurality of first access lines that comprises a first subset and a second subset, wherein:
• each first access line in the first subset is coupled with a ground reference;
• and
• each first access line in the second subset is isolated from the ground reference;
• a plurality of second access lines, wherein each second access line is configured to be:
• isolated from a corresponding first access line of the plurality of first access lines when a voltage differential between the second access line and the corresponding first access line is below a threshold voltage of a chalcogenide material that is interposed between the second access line and the corresponding first access line;
• coupled with the corresponding first access line of the plurality of first access lines when the voltage differential between the second access line and the corresponding first access line exceeds the threshold voltage of the chalcogenide material;
• and
• a lower access line at a lower level of the apparatus below the plurality of first access lines, the lower access line isolated from the ground reference and configured to be coupled with a first access line in the plurality of first access lines when a first voltage differential between the first access line and the lower access line exceeds a first threshold voltage.

An apparatus, comprising:

• a lower access line that is isolated from a ground reference;
• a set of middle access lines that comprises a first subset and a second subset, wherein:
• each middle access line in the first subset is coupled with the ground reference;
• and
• each middle access line in the second subset is isolated from the ground reference;
• and
• a set of upper access lines, wherein each upper access line is configured to be:
• isolated from a corresponding middle access line of the set of middle access lines when a voltage differential between the upper access line and the corresponding middle access line is below a threshold voltage of a chalcogenide material that is interposed between the upper access line and the corresponding middle access line;
• and
• coupled with the corresponding middle access line of the set of middle access lines when the voltage differential between the upper access line and the corresponding middle access line exceeds the threshold voltage of the chalcogenide material.

An apparatus, comprising:

• a plurality of first metal lines at a first level of the apparatus, the plurality of first metal lines comprising a first subset and a second subset, wherein:
• each first metal line in the first subset is directly coupled with a ground reference;
• and
• each first metal line in the second subset is isolated from the ground reference;
• and
• a plurality of second metal lines that are uncoupled from any voltage source within the apparatus and that are at a second level of the apparatus above the first level, wherein each second metal line in the plurality of second metal lines is configured to be:
• isolated from a corresponding first metal line of the plurality of first metal lines when a voltage differential between the second metal line and the corresponding first metal line is below a threshold voltage of a chalcogenide material interposed between the second metal line and the corresponding first metal line;
• and
• coupled with the corresponding first metal line of the plurality of first metal lines when the voltage differential between the second metal line and the corresponding first metal line exceeds the threshold voltage of the chalcogenide material.