Superconducting memory with josephson phase-based torque

A method in a memory cell comprising a first inductor and a magnetic Josephson junction (MJJ) coupled to the first inductor to form a loop, wherein the MJJ comprises at least a first layer formed above a second layer and a third layer formed below the second layer, wherein the first layer is a free magnetic layer, the second layer is a non-magnetic layer, wherein the third layer is a fixed magnetic layer, wherein the memory cell is configured to be in a first state or a second state, and wherein the first state corresponds to a first configuration of magnetization of the free magnetic layer and the second state corresponds to a second configuration of magnetization of the free magnetic layer, wherein the first configuration of the magnetization of the free magnetic layer corresponds to a first magnetization that is parallel to a magnetization of the fixed magnetic layer and the second configuration of the magnetization of the free magnetic layer corresponds to a second magnetization that is anti-parallel to the magnetization of the fixed magnetic layer, the method comprising:

• receiving a write pulse via a write-bit line;
• and
• in response to a current flowing through the MJJ, switching from the first state of the memory cell to the second state of the memory cell based on whether the MJJ is in a zero-state or a π-state, wherein in response to a change in a superconducting phase of the MJJ from the zero-state to the π-state, the current flowing through the MJJ is configured to exert a Josephson-phase-dependent torque on the magnetization of the free magnetic layer to cause the switching from the first state of the memory cell to the second state of the memory cell, and wherein the current is produced in response to an application of flux to the loop via the first inductor.