3D perpendicular magnetic crossbar memory
AssigneeCarnegie Mellon University
InventorsJian-Gang Zhu, Chia-Ling Chien, Qinli Ma
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Abstract
A memory array that comprises three dimensionally stacked two-dimensional memory arrays. The memory array includes a first layer and a second layer oriented orthogonal to the first layer. The memory array further includes a magnetic tunnel junction adjacent to each of the first layer and the second layer. The magnetic tunnel junction further includes a first magnetic layer adjacent to the second layer. Additionally, the magnetic tunnel junction includes a second magnetic layer adjacent to the first layer. The magnetic tunnel junction also includes a tunnel layer adjacent to the first magnetic layer and the second magnetic layer.
Claims24
A memory array, comprising:
- a first layer;
- a second layer oriented orthogonal to the first layer;
- and
- a magnetic tunnel junction adjacent to each of the first layer and the second layer, the magnetic tunnel junction comprising:
- a first magnetic layer in contact with the second layer;
- a second magnetic layer in contact with the first layer;
- and
- a tunnel barrier layer adjacent to the first magnetic layer and the second magnetic layer.
A method for programming a memory element in a memory array, wherein the memory array comprises a first layer with a plurality of columns, a second layer with a plurality of rows, and a magnetic tunnel junction adjacent to each of the first layer and the second layer, the method comprising:
- applying a current with a first amplitude, a first polarity, and a first duration to a column in the first layer of the memory array to program the memory element;
- applying a voltage with a second amplitude, a second polarity, and a second duration to a row in the second layer of the memory array to program the memory element;
- and
- applying a bias voltage to one or more other columns in the first layer of the memory array.
A method for reading a memory element in a memory array, wherein the memory array comprises a first layer with a plurality of columns, a second layer with a plurality of rows, and a magnetic tunnel junction adjacent to each of the first layer and the second layer, the method comprising:
- applying a first voltage with a first amplitude, a first polarity, and a first duration to a column in the first layer in the memory array to read the memory element;
- applying a second voltage to a row in the second layer in the memory array to read the memory element;
- and
- determining a resistance of the memory element that corresponds to the column in the first layer and the row in the second layer by identifying a current value in the column of the first layer.
A system, comprising:
- a first layer to conduct voltage;
- a second layer to conduct current, wherein the second layer is rotated about a plane of 90 degrees with respect to the first layer;
- a reference layer with a first perpendicular magnetic anisotropy adjacent to a surface of the first layer, wherein the reference layer comprises an amorphous phase layer;
- a tunnel barrier adjacent to a surface of the reference layer;
- and
- a free layer with a second perpendicular magnetic anisotropy adjacent to a surface of the tunnel barrier and a surface of the second layer.
Dependencies are inferred from the claim text.